Thermal annealing effect on electrical properties of metal nitride gate …
Electrical properties of hafnium oxide (HfO2) gate dielectric with various metal nitride gate electrodes, i.e., tantalum nitride (TaN), molybdenum nitride (MoN), and tungsten nitride (WN), were ...
[PDF] High-κ Complex Oxides for Advanced Gate Dielectric …
Complex oxides offer a higher degree of flexibility to tackle the major shortcoming of highκ oxides. In this work, hafnium zirconate, hafnium aluminate and zirconium aluminate thin films were grown on silicon, gallium nitride and indium phosphide for advanced gate dielectric applications using plasma enhanced atomic layer deposition.
Hafnium-based High-k Gate Dielectrics
Hafnium-based High-k Gate Dielectrics 335 Fig. 3. Schematic of direct tunneling through SiO2 [3]. Gate electrode Gate dielectric Substrate Source Drain Fig. 4. Schematic drawing of a MOS stack. numerous oxides with extremely large k values, such as SrTiO3, which are candidates in DRAM capacitors [6], but their band gap is too small.
High‐density remote plasma sputtering of high‐dielectric…
1 Introduction. Hafnium oxide (HfO x) is a wide bandgap material whose high resistivity, high dielectric constant, k, and large conduction and valence band offset with respect to silicon has led to its adoption as a replacement for silicon dioxide as the gate dielectric in CMOS devices 1, 2.In particular, the high value of k (typically ∼25) allows the thickness …
Complex High-κ Oxides for Gate Dielectric Applications
Gate dielectrics with enhanced capacitance density and small current leakage are critical for continuous scaling of electronic devices. Enhanced capacitance and suppressed current leakage, however, rarely occur simultaneously. Hafnium zirconate, hafnium aluminate and zirconium aluminate thin films are grown on silicon and indium …
Coaxial boron nitride nanotubes as interfacial dielectric
The subthreshold swing of 68 mV·dec−1 is obtained despite a 100-nm-thick SiO2 dielectric, corresponding to the effective interface trap density of 5.2 × 1011 cm−2·eV−1, one order of magnitude lower than those of carbon nanotube devices without boron nitride passivation.
Thermal annealing effect on electrical properties of …
Electrical properties of hafnium oxide (HfO 2) gate dielectric with various metal nitride gate electrodes, i.e., tantalum nitride (TaN), molybdenum nitride (MoN), …
US6436801B1
A field effect semiconductor device comprising a high permittivity hafnium (or hafnium-zirconium) nitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A hafnium (or hafnium-zirconium) nitride gate dielectric layer 36 is …
2D-3D integration of hexagonal boron nitride and a high-κ dielectric …
Here, three-dimensional hafnium oxide and two-dimensional hexagonal boron nitride are integrated in the insulating section of double-layer graphene optical modulators, leading to a maximum ...
High Performance and High Yield Solution Processed IGZO …
The solution processed transparent hafnium dioxide gate dielectric IGZO transistors are shown to exhibit comparatively significantly lower device variation and high yield, allowing for the reproducible fabrication of large-area and transparent solution processed microelectronics systems. ... Fortunately, Hafnium oxide dielectric properties …
Advanced measurement and diagnosis of the effect on the
Among high dielectric constant materials, hafnium oxide (HfO 2) films are being used in the semiconductor industry due to their relatively high K values (K = 25) and large band gaps 21.
Hafnium-based High-k Gate Dielectrics
Table I. Dielectric constant (k), band gap and CB offset on Si of the candidat e gate dielectrics. Fig. 5. Static dielectric constant versus band gap for candidate gate oxides …
Zirconium-Doped Tantalum Oxide Gate Dielectric Films
Drastic improvement of the dielectric properties of the hafnium-doped tantalum oxide high dielectric constant thin film with the insertion of a 5 Å tantalum nitride interface layer was observed.
Uniform and ultrathin high-κ gate dielectrics for two …
Currently, the most advanced Si metal–oxide–semiconductor field-effect transistors (MOSFETs) (such as the 14-nm FinFET structures by Intel) have a hafnium …
Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric …
Thin-film HfO 2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56-200-Aring-thick HfO 2 films. A picosecond pump-probe thermoreflectance technique yields room-temperature …
Uniform and ultrathin high-κ gate dielectrics for …
Currently, the most advanced Si metal–oxide–semiconductor field-effect transistors (MOSFETs) (such as the 14-nm FinFET structures by Intel) have a hafnium oxide (HfO 2) gate dielectric with a ...
Nature of Tunable Optical Reflectivity of Rocksalt Hafnium Nitride
Two envisioned applications are the combination of HfO 2 with HfN as gate dielectric and gate metal in a MOS configuration as reported by Yu et al. 1,5 and HfN as back reflector electrode for ...
Thermal annealing effect on electrical properties of metal nitride gate …
Electrical properties of hafnium oxide (HfO 2) gate dielectric with various metal nitride gate electrodes, i.e., tantalum nitride (TaN), molybdenum nitride (MoN), and tungsten nitride (WN), were studied over a range of HfO 2 thicknesses, e.g., 2.5–10 nm, and post-metal annealing (PMA) temperatures, e.g., 600 °C to 800 °C. The work function …
Effects of metal gate-induced strain on the performance
Request PDF | Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric | In ...
Tantalum Nitride Interface Layer Influence on Dielectric
Drastic improvement of the dielectric properties of the hafnium-doped tantalum oxide high dielectric constant thin film with the insertion of a 5 Å tantalum nitride interface layer was observed.
Hafnium-nitride gate insulator formed by electron …
2. low leakage current of 6.2 10−4 A/cm2 (@ V -1 V) was obtained. FB. The results suggest that the effect of hydrogen anneal attributed to improve the electrical properties of HfN gate dielectric. Keywords: hafnium nitride, hydrogen anneal, ECR plasma sputter-ing. Classification: Electron devices, circuits, and systems.
Gate dielectric based steady state & transient analysis of …
Gate dielectric materials play a crucial role in the design of organic thin-film transistors. The effects of the low-k and high-k gate dielectric materials, both organic and inorganic, on the bottom gate Pentacene/a-IGZO thin-film transistors (TFT) are studied and simulated using 2D numerical device simulation. The effect on the electrical …
US 20020177293A1
A hafnium (or hafnium-zirconium) nitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Hafnium (or hafnium-zirconium) nitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.
Enhancing Performance of Dual-Gate FinFET with High-K Gate Dielectric …
The rapid advancement in nanoscale devices demands innovative gate dielectric materials to replace traditional Silicon dioxide. This paper investigates the electrical behavior and performance of a dual-gate FinFET employing different high-K gate dielectric materials (Silicon dioxide, Hafnium oxide, Titanium oxide) through ATLAS 2D …
[PDF] Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric
Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films. Thin-film HfO2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56-200-Aring-thick HfO2 films.
Optical properties and structure of HfO2 thin films
The electrical properties of hafnium oxide (HfO 2) and other metallic oxides with high dielectric constants are being currently investigated with great interest, especially due to the promising possibilities that these materials have found for replacing silicon oxide at the heart of metal–oxide– semiconductor (MOS) transistors [1, 2]. Over ...
Thermal stability of hafnium and hafnium nitride …
The poly-silicon gate technology will be replaced by metal gates beyond the 65 nm technology node due to several emerging issues such as gate depletion, dopant …
Hafnium-Based High-k Gate Dielectrics
Abstract. This chapter succinctly reviews the motivation to replace traditional SiO2 gate dielectrics, requirements of high-k dielectrics, brief history of high-k materials …
Review on the Microstructure of Ferroelectric …
In this review we provide an overview how the stack structure and process conditions influence the microstructure and how the microstructure, in turn, effects the applications of ferroelectric hafnium oxide films in electronic …
US20020177293A1
A field effect semiconductor device comprising a high permittivity hafnium (or hafnium-zirconium) nitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A hafnium (or hafnium-zirconium) nitride gate dielectric layer 36 is …
