Porous thin films comprising nanoparticles of In 2 O 3:Sn (known as indium tin oxide, ITO) were made by spin coating followed by annealing.The nanoparticles were prepared by a wet chemical technique. The films had a luminous transmittance of ∼90% and an electrical resistivity of ∼10 −2 Ω cm. Spectral transmittance and reflectance were …
Indium tin oxide (ITO) films as the low emissivity coatings of Ni-based alloy at high temperature were studies. ITO films were deposited on the polished surface of alloy K424 by direct current ...
Fig. 1 shows the overall flow-chart for ITO thin films preparation. Three grams anhydrous indium trichloride powder (InCl 3) and 22.61 ml acetylacetone were mixed at room temperature and then refluxed at 60 °C until indium trichloride was completely dissolved.Two magnetic stirrers were added to the water bath to agitate the refluxing …
Indium-tin-oxide (ITO) is a degenerate, wide bandgap semiconductor, and is very useful as transparent electrode for flat panel display devices, solar cells, sensors, and organic light emitting diodes (OLED) because of its high optical transmittance and low resistivity. In this article, the optical, structural, and electrical properties of ITO thin films …
The indium tin oxide (ITO) films of flat panel displays are one of the TCO films and usually ablated using the wet etching, which is widely adopted in the semiconductor processing. However, the chemical wet etching techniques usually appear with more disadvantages in the procedure, including the chemical pollution, the under …
Transparent conducting oxides are materials characterized by the simultaneous occurrence of high optical transparency and electrical conductivity. Among them, tin-doped indium oxide (ITO) has been established as the best material with these criteria. This work focused on the enhancement of the electrical conductivity of ITO thin …
In this system, the contamination of the ITO film by tin compounds is a possibility because Sn(acac) 2 Cl 2 is added during the formation of the ITO film. To avoid contamination by tin compounds, the molar ratio of indium to tin used was 18:1, which reduces the content of tin in the film, and the low stability of SnCl 4, compared to that of …
Indium tin oxide (ITO) is a transparent conductor used in applications such as touch screens, smart windows and displays. A key limitation of ITO is its brittle …
a, Atomic force microscopy images of ITO film.The surface root mean square roughness is 0.3 nm. b, Cross-section TEM analysis and corresponding high-resolution EDX mapping of elements silicon (Si ...
Transparent conducting indium tin oxide (ITO) thin films (40–870 nm) were grown by pulsed laser deposition on amorphous substrates and the structural, electrical, and optical properties of these films were investigated. Films were deposited using a KrF excimer laser ...
Thermoacoustic effects were observed in 100-nm indium tin oxide (ITO) films. The sound emission from the ITO films was measured as a function of power, distance, and frequency. Significant flat and wide frequency responses occurred between 20 …
In this research, indium tin oxide (ITO) thin films of various thickness (200, 250, 300, 350, 400 nm) were deposited on polycarbonate polymer substrates using a magnetron sputtering technique.The structure, morphology, surface composition, optical and electrical properties of the thin films were investigated by X-ray diffraction (XRD), …
Among TCOs, indium tin oxide (ITO) thin films are the most commonly used electrodes due to their high transmittance (> 80%) at 550 nm and low sheet resistance (<200 Ω/sq) [9]. Using vacuum-based physical vapor deposition techniques for the preparation of ITO thin films can be very efficient to obtain low sheet resistance, but …
Although multicomponent inorganic thin films (metal-oxides, -carbides, -nitrides, and -chalcogenides) have been synthesized by polymer-assisted deposition (PAD), synthesis of high-performance transparent conducting oxides (TCOs) has been rarely reported. TCO requires (i) removal of impurities, (ii) high-density oxide film, (iii) homogeneity in crystal …
Indium tin oxide (ITO) films as the low emissivity coatings of Ni-based alloy at high temperature were studies. ITO films were deposited on the polished surface of alloy K424 by direct current magnetron sputtering. These ITO-coated samples were heat-treated in air at 600–900 ...
The bandgap energies of ITO films grown at substrate temperatures of 25°C, 100°C, 200°C and 275°C were 3.527, 3.625, 3.754 and 3.8 eV, respectively. The bandgap energy of ITO films varied along with the substrate temperature. It increased from 3.527 to 3.8 eV as the substrate temperature increased from 25°C to 275°C.
Annealing-free fabrication of high-quality indium tin oxide films for free-carrier-based hybrid metal–semiconductor nanophotonics. Alexander Korneluk, Julia …
Indium oxide (In 2 O 3) and indium tin oxide (ITO) thin films have been investigated for high temperature thermocouple and strain guage applications.Reactive sputtering in nitrogen-rich plasmas was used to improve the high temperature stability of indium oxide-based films in air and scanning electron microscopy was used to follow the …
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Here, we demonstrate coherent THz radiation from an ITO film via four-wave mixing, a third-order nonlinear process, under the excitation of two-color pulsed laser fields. Experimentally, an in-line phase compensator is utilized to synthesize the asymmetric optical fields to induce photocurrent in an ITO film and consequently emit THz waves.
Here, we present 2-bit amplitude-modulated coding metasurfaces based on optically transparent indium tin oxide films in the microwave frequency regime. The proposed coding metasurfaces are composed of coding unit cells with multiring structures with specific coding sequences, allowing the dramatic control of reflected amplitudes …
The aim of this paper is the replacing of the expensive sputtering method with the low cost sol–gel one in TCO applications. To this end two sets of indium tin oxide (ITO) thin films are compared and discussed in this paper: one obtained by r.f. sputtering and one by the sol–gel technique and dip-coating. For each of these sets of samples, a …
Indium-tin-oxide (ITO) is a degenerate, wide bandgap semiconductor, and is very useful as transparent electrode for flat panel display devices, solar cells, sensors, …
This study investigates the impact of parameters on the adhesion strength of ink-jet films, focusing on indium tin oxide (ITO) and indium oxide (In 2 O 3) films deposited on ceramic substrates with varying speed and stack layers.The surface morphology of films with different parameters is characterized, and …
Indium tin oxide (ITO) films deposited on single‐crystal Si wafers by the electron‐beam‐(EB) evaporation method have been investigated by x‐ray photoelectron spectroscopy (XPS) together with work‐function and resistivity measurements. The XPS studies suggest that all the ITO films consist of crystalline and amorphous phases.
The influence of the oxygen flow ratio (f O2) and hydrogen flow ratio (f H2) on the optoelectronic properties of the indium tin oxide (ITO) films are studied together.An increase of the carrier density and mobility can be achieved by using hydrogen during the sputtering process, resulting in an improvement of the film conductivity.
The primary focus of the current project is to produce thin films of indium and tin (and their associated oxides and alloys) with controlled thicknesses and known microstructures suitable for immunoassay testing. Emphasis is on correlating fun damental thin-film properties with the strength and quality of the immunoassay visual response.
Tin-doped indium oxide (ITO) thin films have been commonly used for opto-electronic applications due to low resistivity, high transmittance, and good etching properties [1], [2], [3]. Many researchers have reported the use of spectroscopic ellipsometry for measuring optical constants (refractive index, n, and extinction …
The crystallization of amorphous indium tin oxide (ITO) films was achieved by rf (13.56 MHz) plasma treatment. Although the films were crystallized after 2 min , the sample temperature was lower than 90 ° C without compulsory cooling even after 10 min of treatment and polyethylene terephthalate (PET) substrates had no damage. Plasma …
Less frequently, ITO can be incorporated in inks using an appropriate film-forming polymer resin and solvent system, and deposited by screen - albeit with lower transparency and conductivity compared to a physical deposition process. Indium Tin Oxide is available as a powder, but can also be supplied in the form of ITO Targets for ...